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Title:
193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors
Authors:
Soltani, A.; Barkad, H. A.; Mattalah, M.; Benbakhti, B.; de Jaeger, J.-C.; Chong, Y. M.; Zou, Y. S.; Zhang, W. J.; Lee, S. T.; Benmoussa, A.; Giordanengo, B.; Hochedez, J.-F.
Affiliation:
AA(Institut d'Electronique, de Microélectronique et de Nanotechnologie (IEMN), Cité Scientifique-Avenue Poincaré, BP 60069, F-59652 Villeneuve d'Ascq, France), AB(Institut d'Electronique, de Microélectronique et de Nanotechnologie (IEMN), Cité Scientifique-Avenue Poincaré, BP 60069, F-59652 Villeneuve d'Ascq, France), AC(Institut d'Electronique, de Microélectronique et de Nanotechnologie (IEMN), Cité Scientifique-Avenue Poincaré, BP 60069, F-59652 Villeneuve d'Ascq, France), AD(Institut d'Electronique, de Microélectronique et de Nanotechnologie (IEMN), Cité Scientifique-Avenue Poincaré, BP 60069, F-59652 Villeneuve d'Ascq, France), AE(Institut d'Electronique, de Microélectronique et de Nanotechnologie (IEMN), Cité Scientifique-Avenue Poincaré, BP 60069, F-59652 Villeneuve d'Ascq, France), AF(Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong Special Administrative Region, People's Republic of China), AG(Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong Special Administrative Region, People's Republic of China), AH(Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong Special Administrative Region, People's Republic of China), AI(Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong Special Administrative Region, People's Republic of China), AJ(Royal Observatory of Belgium (ROB), Solar Terrestrial Center of Excellence (STCE), Circular Avenue 3, B-1180 Brussels, Belgium), AK(Royal Observatory of Belgium (ROB), Solar Terrestrial Center of Excellence (STCE), Circular Avenue 3, B-1180 Brussels, Belgium), AL(Royal Observatory of Belgium (ROB), Solar Terrestrial Center of Excellence (STCE), Circular Avenue 3, B-1180 Brussels, Belgium)
Publication:
Applied Physics Letters, Volume 92, Issue 5, id. 053501 (3 pages) (2008). (ApPhL Homepage)
Publication Date:
02/2008
Origin:
AIP
PACS Keywords:
Photodetectors
DOI:
10.1063/1.2840178
Bibliographic Code:
2008ApPhL..92e3501S

Abstract

Deep-ultraviolet (DUV) solar-blind photodetectors based on high-quality cubic boron nitride (cBN) films with a metal/semiconductor/metal configuration were fabricated. The design of interdigitated circular electrodes enables high homogeneity of electric field between pads. The DUV photodetectors present a peak responsivity at 180 nm with a very sharp cutoff wavelength at 193 nm and a visible rejection ratio (180 versus 250 nm) of more than four orders of magnitude. The characteristics of the photodetectors present extremely low dark current, high breakdown voltage, and high responsivity, suggesting that cBN films are very promising for DUV sensing.
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