Sign on

SAO/NASA ADS Physics Abstract Service

· Find Similar Abstracts (with default settings below)
· Electronic Refereed Journal Article (HTML)
· References in the article
· Citations to the Article (4) (Citation History)
· Refereed Citations to the Article
· Reads History
·
· Translate This Page
Title:
Characterization of AlN metal-semiconductor-metal diodes in the spectral range of 44-360 nm: Photoemission assessments
Authors:
Benmoussa, A.; Hochedez, J. F.; Dahal, R.; Li, J.; Lin, J. Y.; Jiang, H. X.; Soltani, A.; de Jaeger, J.-C.; Kroth, U.; Richter, M.
Affiliation:
AA(Royal Observatory of Belgium, Solar Terrestrial Center of Excellence (STCE), Circular Avenue 3, B-1180 Brussels, Belgium), AB(Royal Observatory of Belgium, Solar Terrestrial Center of Excellence (STCE), Circular Avenue 3, B-1180 Brussels, Belgium), AC(Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601, USA), AD(Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601, USA), AE(Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601, USA), AF(Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601, USA), AG(Institut d'Electronique, de Microélectronique et de Nanotechnologie (IEMN), F-59652 Villeneuve d'Ascq, France), AH(Institut d'Electronique, de Microélectronique et de Nanotechnologie (IEMN), F-59652 Villeneuve d'Ascq, France), AI(Physikalisch-Technische Bundesanstalt (PTB), Abbestr. 2-12, D-10587 Berlin, Germany), AJ(Physikalisch-Technische Bundesanstalt (PTB), Abbestr. 2-12, D-10587 Berlin, Germany)
Publication:
Applied Physics Letters, Volume 92, Issue 2, id. 022108 (3 pages) (2008). (ApPhL Homepage)
Publication Date:
01/2008
Origin:
AIP
PACS Keywords:
Photodiodes; phototransistors; photoresistors
DOI:
10.1063/1.2834701
Bibliographic Code:
2008ApPhL..92b2108B

Abstract

The absolute responsivity of a metal-semiconductor-metal (MSM) photodiode based on high quality AlN material has been tested from the vacuum ultraviolet (vuv) to the near UV wavelength range (44-360 nm). The metal finger Schottky contacts have been processed to 2 μm in width with spacing between the contacts of 4 μm. In the vuv wavelength region, the measurement methodology is described in order to distinguish the contribution of the photoemission current from the internal diode signal. In the wavelength range of interest, AlN MSM is sensitive and stable under brief vuv irradiation. The MSM shows a 200/360 nm rejection ratio of more than four orders of magnitude and demonstrates the advantages of wide band gap material based detectors in terms of high rejection ratio and high output signal for vuv solar observation missions.
Bibtex entry for this abstract   Preferred format for this abstract (see Preferences)
   

Find Similar Abstracts:

Use: Authors
Title
Keywords (in text query field)
Abstract Text
Return: Query Results Return    items starting with number
Query Form
Database: Astronomy
Physics
arXiv e-prints