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Title:
AlxGa1-xN focal plane arrays for imaging applications in the extreme ultraviolet (EUV) wavelength range
Authors:
John, J.; Malinowski, P.; Aparicio, P.; Hellings, G.; Lorenz, A.; Germain, M.; Semond, F.; Duboz, J.-Y.; BenMoussa, A.; Hochedez, J.-F.; Kroth, U.; Richter, M.
Affiliation:
AA(IMEC (Belgium)), AB(Catholic University of Leuven (Belgium)), AC(Catholic University of Leuven (Belgium)), AD(Catholic University of Leuven (Belgium)), AE(Catholic University of Leuven (Belgium)), AF(IMEC (Belgium)), AG(CRHEA, CEA (France)), AH(CRHEA, CEA (France)), AI(Royal Observatory of Belgium (Belgium)), AJ(Royal Observatory of Belgium (Belgium)), AK(Physikalisch-Technische Bundesanstalt (Germany)), AL(Physikalisch-Technische Bundesanstalt (Germany))
Publication:
Optical Sensing Technology and Applications. Edited by Baldini, Francesco; Homola, Jiri; Lieberman, Robert A.; Miler, Miroslav. Proceedings of the SPIE, Volume 6585, pp. 658505 (2007). (SPIE Homepage)
Publication Date:
06/2007
Origin:
SPIE
DOI:
10.1117/12.723023
Bibliographic Code:
2007SPIE.6585E...5J

Abstract

Metal-Semiconductor-Metal photodiodes were fabricated on epitaxially grown AlxGa1-xN on Si(111). The Aluminium content of the layers grown by means of molecular beam epitaxy (MBE) was 50, 80 and 100%, respectively. The processing was performed by standard microelectronic fabrication techniques like photolithography, wet and dry etching (RIE) and physical and chemical vapor deposition (PVD,CVD). The devices were characterized under illumination in a wavelength range from 400 to 185nm to determine the cut-off wavelength defined by the band-gap energy. Typical figures of merit like spectral responsivity R quantum efficiency ɛ and specific detectivity D* have been extracted from the measurement data.
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